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DSEP12-12B - Epitaxial Diode

Key Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.
  • Epoxy meets UL 94V-0.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSEP12-12B HiPerFREDTM Epitaxial Diode with soft recovery VRSM V 1200 VRRM V 1200 DSEP 12-12B Type IFAV = 15 A VRRM = 1200 V trr = 35 ns TO-220 AC A C C A C (TAB)  A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Symbol IR  VF ‚ RthJC RthCH trr IRM Conditions TC = 120°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 9 A; L = 180 µH VA = 1.25·VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 15 90 8.7 0.9 -55...+175 175 -55...