DSEP12-12AZ
FEATURES
- With TO-263 packaging
- Metal silicon junction, majority carrier conduction
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching power supply
- High frequency inverters
- Reverse battery protection
- Polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMB OL
PARAMETER
VALUE UNIT
VRRM VRMS
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
IF(AV)
Average Rectified @Tc=135℃
Forward
Current
IFRM Repetitive Peak Forward Current@Tc=128℃
Nonrepetitive Peak Surge Current
IFSM 10 ms single half sine-wave superimposed on 90
A rated load conditions;One shot(50Hz)
Tj
Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-55~175 ℃
DSEP12-12AZ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Ultra fast Rectifier
THERMAL CHARACTERISTICS
SYMBOL...
