DSEP15-06AS
FEATURES
- With TO-263 packaging
- Metal silicon junction, majority carrier conduction
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching power supply
- High frequency inverters
- Reverse battery protection
- Polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VRRM VRMS
VR IF(AV)
IFSM
PD Tj
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=140℃
Nonrepetitive Peak Surge Current
10 ms single half sine-wave superimposed on
A rated load conditions;One shot
Maximum Power Dissipation
Junction Temperature
-40~175 ℃
Tstg
Storage Temperature Range
-55~175 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Ultra fast Rectifier
THERMAL CHARACTERISTICS
SYMBOL...
