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CPC3703CTR - 250V N-Channel Depletion-Mode FET

Download the CPC3703CTR datasheet PDF. This datasheet also covers the CPC3703 variant, as both devices belong to the same 250v n-channel depletion-mode fet family and are provided as variant models within a single manufacturer datasheet.

Description

The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

  • High Breakdown Voltage: 250V.
  • Low On-Resistance: 4 max. at 25ºC.
  • Low VGS(off) Voltage: -1.6 to -3.9V.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • High Input Impedance.
  • Small Package Size: SOT-89.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC3703-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 250V RDS(on) (max) 4 IDSS (min) 360mA Package SOT-89 Features • High Breakdown Voltage: 250V • Low On-Resistance: 4 max. at 25ºC • Low VGS(off) Voltage: -1.6 to -3.9V • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • High Input Impedance • Small Package Size: SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply Package Pinout D G D S (SOT-89) CPC3703 250V N-Channel Depletion-Mode FET Description The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.
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