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CPC3701 - N-Channel MOSFET

Description

The CPC3701 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • Low On-Resistance: 1 max. at 25ºC.
  • High Input Impedance.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • Small Package Size SOT-89.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 60V RDS(on) (max) 1 IDSS (min) 600mA Package SOT-89 Features • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 1 max. at 25ºC • High Input Impedance • Low VGS(off) Voltage: -1.4 to -3.1V • Small Package Size SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Security • Power Supplies CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET Description The CPC3701 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.
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