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CPC3703C - 250V N-Channel Depletion-Mode FET

This page provides the datasheet information for the CPC3703C, a member of the CPC3703 250V N-Channel Depletion-Mode FET family.

Description

The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

  • High Breakdown Voltage: 250V.
  • Low On-Resistance: 4 max. at 25ºC.
  • Low VGS(off) Voltage: -1.6 to -3.9V.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • High Input Impedance.
  • Small Package Size: SOT-89.

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Datasheet preview – CPC3703C

Datasheet Details

Part number CPC3703C
Manufacturer IXYS (now Littelfuse)
File Size 117.23 KB
Description 250V N-Channel Depletion-Mode FET
Datasheet download datasheet CPC3703C Datasheet
Additional preview pages of the CPC3703C datasheet.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 250V RDS(on) (max) 4 IDSS (min) 360mA Package SOT-89 Features • High Breakdown Voltage: 250V • Low On-Resistance: 4 max. at 25ºC • Low VGS(off) Voltage: -1.6 to -3.9V • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • High Input Impedance • Small Package Size: SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply Package Pinout D G D S (SOT-89) CPC3703 250V N-Channel Depletion-Mode FET Description The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.
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