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CPC3701C - N-Channel MOSFET

Download the CPC3701C datasheet PDF. This datasheet also covers the CPC3701 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The CPC3701 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • Low On-Resistance: 1 max. at 25ºC.
  • High Input Impedance.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • Small Package Size SOT-89.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC3701-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
CPC3701CTR N-Channel MOSFET
CPC3701 N-Channel MOSFET
CPC3703 250V N-Channel Depletion-Mode FET
CPC3703C 250V N-Channel Depletion-Mode FET
CPC3703CTR 250V N-Channel Depletion-Mode FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 60V RDS(on) (max) 1 IDSS (min) 600mA Package SOT-89 Features • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 1 max. at 25ºC • High Input Impedance • Low VGS(off) Voltage: -1.4 to -3.1V • Small Package Size SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Security • Power Supplies CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET Description The CPC3701 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.
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