Datasheet4U Logo Datasheet4U.com

IS67WVE4M16TCLL - 64Mb Async/Page PSRAM

Download the IS67WVE4M16TCLL datasheet PDF. This datasheet also covers the IS66WVE4M16EALL variant, as both devices belong to the same 64mb async/page psram family and are provided as variant models within a single manufacturer datasheet.

Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 60ns, 70ns.
  • Intrapage Read access : 25ns.
  • Low Power Consumption.
  • Asynchronous Operation < 30.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS66WVE4M16EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS67WV51216DBLL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution
IS6003 OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC ETC
IS6005 OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC ETC
IS6010 OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC ETC
IS6015 OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC ETC

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS67WVE4M16TALL 64Mb Async/Page PSRAM
IS67WVE4M16TBLL 64Mb Async/Page PSRAM
IS67WVE4M16ALL 1.8V Core Async/Page PSRAM
IS67WVE4M16EALL 64Mb Async/Page PSRAM
IS67WVE4M16EBLL 64Mb Async/Page PSRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS66/67WVE4M16EALL/BLL/CLL IS66/67WVE4M16TALL/BLL/CLL 64Mb Async/Page PSRAM AUGUST 2018 Overview The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features  Asynchronous and page mode interface  Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.
Published: |