IS67WV51216DBLL Datasheet PDF - Integrated Silicon Solution 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Specs

IS67WV51216DBLL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM

This page provides the datasheet information for the IS67WV51216DBLL, a member of the IS66WV51216DALL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM family.

Datasheet Summary

Description

words by 16 bits.

Features

High-speed access time:.
70ns (IS66WV51216DALL, IS66/67WV51216DBLL).
55ns (IS66/67WV51216DBLL).
CMOS low power operation.
Single power supply.
Vdd = 1.7V-1.95V (IS66WV51216 ALL).
Vdd = 2.5V-3.6V (IS66/67WV51216 BLL).
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.
Lead-free available.

Datasheet Details

Part number	IS67WV51216DBLL
Manufacturer	Integrated Silicon Solution
File Size	458.73 KB
Description	8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Datasheet	IS67WV51216DBLL Datasheet
Additional preview pages of the IS67WV51216DBLL datasheet.

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Full PDF Text Transcription

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hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JULY 2011 FEATURES • High-speed access time: – 70ns (IS66WV51216DALL, IS66/67WV51216DBLL) – 55ns (IS66/67WV51216DBLL) • CMOS low power operation • Single power supply – Vdd = 1.7V-1.95V (IS66WV51216 ALL) – Vdd = 2.5V-3.6V (IS66/67WV51216 BLL) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216DALL and IS66/67WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.

Published: Jun 1, 2014 |