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IS67WVC4M16ALL ISSI 64Mb Async/Page/Burst CellularRAM

Description CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb DRAM core device is organized as 4 Meg x 16 bits. This device is a variation of the industry-standard Flash control interface that dramatically increase READ/WRITE bandwidth compared with other low-power SRAM or Pseudo SRAM offe...
Features
 Single device supports asynchronous , page, and burst operation
 Mixed Mode supports asynchronous write and synchronous read operation
 Dual voltage rails for optional performance
 VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns
 Burst mode for Read and Write ope...

Datasheet PDF File IS67WVC4M16ALL Datasheet - 706.63KB

IS67WVC4M16ALL  






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