Description | CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb DRAM core device is organized as 4 Meg x 16 bits. This device is a variation of the industry-standard Flash control interface that dramatically increase READ/WRITE bandwidth compared with other low-power SRAM or Pseudo SRAM offe... |
Features |
Single device supports asynchronous , page, and burst operation Mixed Mode supports asynchronous write and synchronous read operation Dual voltage rails for optional performance VDD 1.7V~1.95V, VDDQ 1.7V~1.95V Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns Burst mode for Read and Write ope... |
Datasheet | IS67WVC4M16ALL Datasheet - 706.63KB |