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IS67WV1M16EBLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Download the IS67WV1M16EBLL datasheet PDF. This datasheet also covers the IS66WV1M16EALL variant, as both devices belong to the same ultra low power pseudo cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

Features

  • High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL ).
  • CMOS Lower Power Operation.
  • Single Power Supply.
  • VDD =1.7V~1.95V( IS66WV1M16EALL ).
  • VDD =2.5V~3.6V (IS66/67WV1M16EBLL ).
  • Three State Outputs.
  • Data Control for Upper and Lower bytes.
  • Lead-free Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS66WV1M16EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS67WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM
IS67WVC2M16EALL 32Mb Async/Page/Burst CellularRAM
IS67WVC2M16ECLL 32Mb Async/Page/Burst CellularRAM
IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS66WV1M16EALL IS66/67WV1M16EBLL 16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL )  CMOS Lower Power Operation  Single Power Supply  VDD =1.7V~1.95V( IS66WV1M16EALL )  VDD =2.5V~3.6V (IS66/67WV1M16EBLL )  Three State Outputs  Data Control for Upper and Lower bytes  Lead-free Available DESCRIPTION The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
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