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IS67WV51216EBLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

This page provides the datasheet information for the IS67WV51216EBLL, a member of the IS66WV51216EALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

Features

  • High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL ).
  • CMOS Lower Power Operation.
  • Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL ).
  • Three State Outputs.
  • Data Control for Upper and Lower bytes.
  • Lead-free Available.

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Datasheet preview – IS67WV51216EBLL

Datasheet Details

Part number IS67WV51216EBLL
Manufacturer ISSI
File Size 723.87 KB
Description ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Datasheet download datasheet IS67WV51216EBLL Datasheet
Additional preview pages of the IS67WV51216EBLL datasheet.

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IS66WV51216EALL IS66/67WV51216EBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )  CMOS Lower Power Operation  Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL )  Three State Outputs  Data Control for Upper and Lower bytes  Lead-free Available DESCRIPTION The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
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