IS67WVC2M16ECLL
Overview
The IS66WVC2M16EALL/CLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
- Single device supports asynchronous , page, and burst operation
- Mixed Mode supports asynchronous write and synchronous read operation
- Dual voltage rails for optional performance
- ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
- CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
- Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns
- Burst mode for Read and...
