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IS67WVC2M16ECLL

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS67WVC2M16ECLL datasheet preview

Datasheet Details

Part number IS67WVC2M16ECLL
Datasheet IS67WVC2M16ECLL IS66WVC2M16EALL Datasheet (PDF)
File Size 933.75 KB
Manufacturer ISSI (now Infineon)
Description 32Mb Async/Page/Burst CellularRAM
IS67WVC2M16ECLL page 2 IS67WVC2M16ECLL page 3

IS67WVC2M16ECLL Overview

CellularRAMâ„¢ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. This device is a variation of the ind.

IS67WVC2M16ECLL Key Features

  • Single device supports asynchronous , page, and burst operation
  • Mixed Mode supports asynchronous write and synchronous read operation
  • Dual voltage rails for optional performance
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns
  • Burst mode for Read and Write operation
  • 4, 8, 16,32 or Continuous
  • Low Power Consumption
  • Asynchronous Operation < 30 mA
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
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