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IS67WVC4M16ECLL - 64Mb Async/Page/Burst CellularRAM

This page provides the datasheet information for the IS67WVC4M16ECLL, a member of the IS66WVC4M16EALL 64Mb Async/Page/Burst CellularRAM family.

Datasheet Summary

Description

CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

Features

  • Single device supports asynchronous , page, and burst operation.
  • Mixed Mode supports asynchronous write and synchronous read operation.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns.
  • Burst mode for Read and Write operation.
  • 4, 8, 16,32 or Continuous.
  • Low Power Consumption.
  • Async.

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Datasheet preview – IS67WVC4M16ECLL

Datasheet Details

Part number IS67WVC4M16ECLL
Manufacturer ISSI
File Size 1.84 MB
Description 64Mb Async/Page/Burst CellularRAM
Datasheet download datasheet IS67WVC4M16ECLL Datasheet
Additional preview pages of the IS67WVC4M16ECLL datasheet.

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Full PDF Text Transcription

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IS66WVC4M16EALL/CLL IS67WVC4M16EALL/CLL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16EALL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
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