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IS65WV12816EALL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV12816EALL datasheet PDF. This datasheet also covers the IS62WV12816EALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV12816EALL).
  • 2.2V-3.6V VDD (IS62/65WV12816EBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • 2CS Option Available.
  • Lead-free available BLOCK.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV12816EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IS65C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS65WV12816EBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816ALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62/65WV12816EALL IS62/65WV12816EBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL)  Three state outputs  Industrial and Automotive temperature support  2CS Option Available  Lead-free available BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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