IS64WV25632BLL
FEATURES
- High-speed access times: 8, 10, 20 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE options
- CE power-down
- Fully static operation: no clock or refresh required
- TTL patible inputs and outputs
- Single power supply
Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.3V + 5%
- Packages available:
- 90-ball mini BGA (8mm x 13mm)
- Industrial and Automotive Temperature Support
DESCRIPTION
The ISSI IS61WV25632Axx/Bxx and IS64WV25632Bxx are high-speed, 8M-bit static RAMs organized as 256K words by 32 bits. It is fabricated using ISSI's high-per- formance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby...
