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IS64WV25616EDBLL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS64WV25616EDBLL datasheet PDF (IS61WV25616EDBLL included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 256k x 16 high speed asynchronous cmos static ram.

Description

by 16 bits.

CMOS technology.

Features

  • High-speed access time: 8, 10 ns.
  • Low Active Power: 85 mW (typical).
  • Low Standby Power: 7 mW (typical) CMOS standby.
  • Single power supply.
  • Vdd 2.4V to 3.6V (10 ns).
  • Vdd 3.3V ± 10% (8 ns).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • Lead-free available.
  • Error Detection and E.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV25616EDBLL-ISSI.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IS61WV25616EDBLL IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY 2020 FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperature support • Lead-free available • Error Detection and Error Correction FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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