IS64WV25632BLL Datasheet PDF - ISSI 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Specs

IS64WV25632BLL - 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

This page provides the datasheet information for the IS64WV25632BLL, a member of the IS61WV25632ALL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM family.

Datasheet Summary

Description

words by 32 bits.

formance CMOS technology.

Features

High-speed access times: 8, 10, 20 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CE and OE options.
CE power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Single power supply Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) spe.

Datasheet Details

Part number	IS64WV25632BLL
Manufacturer	ISSI
File Size	388.80 KB
Description	256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS64WV25632BLL Datasheet
Additional preview pages of the IS64WV25632BLL datasheet.

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Full PDF Text Transcription

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IS61WV25632ALL/ALS IS61WV25632BLL/BLS IS64WV25632BLL/BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY MAY 2023 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.

Published: Jun 10, 2016 |