Datasheet4U Logo Datasheet4U.com

IS61QDPB42M36C2 - 72Mb QUADP SYNCHRONOUS SRAM

Download the IS61QDPB42M36C2 datasheet PDF. This datasheet also covers the IS61QDPB44M18C variant, as both devices belong to the same 72mb quadp synchronous sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The 72Mb IS61QDPB42M36C/C1/C2 and IS61QDPB44M18 C/C1/C2 are synchronous, high-performance CMOS static random access memory (SRAM) devices.

These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround.

Key Features

  • 2Mx36 and 4Mx18 configuration available.
  • Separate independent read and write ports with concurrent read and write operations.
  • Max. 567 MHz clock for high bandwidth.
  • Double Data Rate (DDR) interface for read and write input ports.
  • 2.5 cycle read latency.
  • Fixed 4-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K#) for address and control registering at rising edges only.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61QDPB44M18C-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61QDPB44M18C/C1/C2 IS61QDPB42M36C/C1/C2 4Mx18, 2Mx36 72Mb QUADP (Burst 4) SYNCHRONOUS SRAM (2.5 Cycle Read Latency) APRIL 2019 FEATURES  2Mx36 and 4Mx18 configuration available.  Separate independent read and write ports with concurrent read and write operations.  Max. 567 MHz clock for high bandwidth  Double Data Rate (DDR) interface for read and write input ports.  2.5 cycle read latency.  Fixed 4-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only. DESCRIPTION The 72Mb IS61QDPB42M36C/C1/C2 and IS61QDPB44M18 C/C1/C2 are synchronous, high-performance CMOS static random access memory (SRAM) devices.