Datasheet4U Logo Datasheet4U.com

IS46DR32801B - 256Mb DDR2 DRAM

Download the IS46DR32801B datasheet PDF (IS43DR32801B included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 256mb ddr2 dram.

Description

ISSI's 256Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation.

The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

Features

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V.
  • JEDEC standard 1.8V I/O (SSTL_18-compatible).
  • Double data rate interface: two data transfers per clock cycle.
  • Differential data strobe (DQS, DQS).
  • 4-bit prefetch architecture.
  • On chip DLL to align DQ and DQS transitions with CK.
  • 4 internal banks for concurrent operation.
  • Programmable CAS latency (CL) 3, 4, 5, and 6 supported.
  • Posted CAS and programmable additive latency (AL) 0,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS43DR32801B-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • IS46R16160F - 256Mb DDR SDRAM (Integrated Silicon Solution)
  • IS46R16320D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
  • IS46R16320E - 512Mb DDR SDRAM (Integrated Silicon Solution)
  • IS46R16800E - 128Mb DDR SDRAM (Integrated Silicon Solution)
  • IS46R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
  • IS46R32160E - 512Mb DDR SDRAM (Integrated Silicon Solution)
  • IS46R32400E - 128Mb DDR SDRAM (Integrated Silicon Solution)
  • IS46R32800F - 256Mb DDR SDRAM (Integrated Silicon Solution)
  • IS46R86400D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
  • IS41C16100 - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE (Integrated Silicon Solution)
Other Datasheets by ISSI

Full PDF Text Transcription

Click to expand full text
IS43/46DR32801B 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.
Published: |