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IS46DR16160B - DDR2 DRAM

This page provides the datasheet information for the IS46DR16160B, a member of the IS46DR83200B DDR2 DRAM family.

Datasheet Summary

Features

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V.
  • JEDEC standard 1.8V I/O (SSTL_18-compatible).
  • Double data rate interface: two data transfers per clock cycle.
  • Differential data strobe (DQS, DQS).
  • 4-bit prefetch architecture.
  • On chip DLL to align DQ and DQS transitions with CK.
  • 4 internal banks for concurrent operation.
  • Programmable CAS latency (CL) 3, 4, 5, 6 and 7 sup- ported.
  • Posted CAS and programmable additive lat.

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Datasheet preview – IS46DR16160B

Datasheet Details

Part number IS46DR16160B
Manufacturer ISSI
File Size 0.98 MB
Description DDR2 DRAM
Datasheet download datasheet IS46DR16160B Datasheet
Additional preview pages of the IS46DR16160B datasheet.

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Full PDF Text Transcription

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IS43/46DR83200B IS43/46DR16160B 32Mx8, 16Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.
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