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IS45SM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM

Download the IS45SM16160E datasheet PDF. This datasheet also covers the IS42SM16160E variant, as both devices belong to the same 4m x 16bits x 4banks mobile synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • I.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42SM16160E-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS45S16160C 256 Mb Single Data Rate Synchronous DRAM Integrated Silicon Solution
IS45S16160D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS45SM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS45SM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45SM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45SM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45SM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features  JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 8K refresh cycle / 64ms. • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst.