• Part: IS45S32400F
  • Description: 4M x 32 128Mb SYNCHRONOUS DRAM
  • Manufacturer: ISSI
  • Size: 827.70 KB
Download IS45S32400F Datasheet PDF
ISSI
IS45S32400F
FEATURES - Clock frequency: 166, 143, 133 MHz - Fully synchronous; all signals referenced to a positive clock edge - Internal bank for hiding row access/precharge - Single Power supply: 3.3V + 0.3V - LVTTL interface - Programmable burst length - (1, 2, 4, 8, full page) - Programmable burst sequence: Sequential/Interleave - Auto Refresh (CBR) - Self Refresh - 4096 refresh cycles every 16ms (A2 grade) or 64 ms (mercial, Industrial, A1 grade) - Random column address every clock cycle - Programmable CAS latency (2, 3 clocks) - Burst read/write and burst read/single write operations capability - Burst termination by burst stop and precharge mand OPTIONS - Package: 86-pin TSOP-II 90-ball TF-BGA - Operating Temperature Range: mercial (0o C to +70o C) Industrial (-40o C to +85o C) Automotive Grade, A1 (-40o C to +85o C) Automotive Grade, A2 (-40o C to +105o C) OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to...