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IS42VM16200D - 1M x 16Bits x 2Banks Low Power Synchronous DRAM

Download the IS42VM16200D datasheet PDF. This datasheet also covers the IS42SM16200D variant, as both devices belong to the same 1m x 16bits x 2banks low power synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal du.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42SM16200D-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42VS16100D 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42VS16160D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42VS16400L 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16160M 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16800E 128Mb Mobile Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42/45SM/RM/VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features  JEDEC standard 3.3V, 2.5V, 1.