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IS42VS16100D - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Datasheet Summary

Description

organized as a 524,288-word x 16-bit x 2-bank for improved performance.

The synchronous DRAMs achieve high-speed data transfer using pipeline architecture.

All inputs and outputs signals refer to the rising edge of the clock input.

Features

  • Clock frequency: 135, 100, 83 MHz.
  • Power Supply: 1.8V.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Two banks can be operated simultaneously and independently.
  • Dual internal bank controlled by A11 (bank select).
  • Programmable burst length (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/ Interleave.
  • Programmable full and half drive strength.
  • Programmable CAS latency (2, 3 clock.

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Datasheet Details

Part number IS42VS16100D
Manufacturer Integrated Silicon Solution
File Size 780.09 KB
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet download datasheet IS42VS16100D Datasheet
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IS42VS16100D 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM ISSI DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42VS16100D is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. ® www.DataSheet4U.c ADVANCED INFORMATION JULY 2005 FEATURES • Clock frequency: 135, 100, 83 MHz • Power Supply: 1.
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