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IS41LV44052B - 4M x 4 (16-MBIT) DYNAMIC RAM

General Description

CMOS Dynamic Random Access Memory.

The Fast Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Key Features

  • Fast Page Mode Access Cycle.
  • TTL compatible inputs and outputs.
  • Refresh Interval: -- 2,048 cycles/32 ms.
  • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • Single power supply: 3.3V ± 10%.
  • Byte Write and Byte Read operation via two CAS.
  • Industrial temperature range -40°C to 85°C.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41LV16256 256K x 16 (4-MBIT) DYNAMIC RAM
IS41LV32256 EDO DYNAMIC RAM
IS41C16128 128K x 16 (2-MBIT) DYNAMIC RAM
IS41C16256 256K x 16 (4-MBIT) DYNAMIC RAM
IS42R16160D 256-MBIT SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS41LV44052B 4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE JANUARY 2010 FEATURES • Fast Page Mode Access Cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C DESCRIPTION The ISSI IS41LV44052B is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.