Datasheet4U Logo Datasheet4U.com

IS35ML02G084 - 2Gb(x8) 3.3V NAND FLASH MEMORY

Download the IS35ML02G084 datasheet PDF. This datasheet also covers the IS34ML02G084 variant, as both devices belong to the same 2gb(x8) 3.3v nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Flexible & Efficient Memory Architecture - Organization: 256Mb x8 - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms.
  • typical.
  • Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS34ML02G084-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS354 PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS ISOCOM
IS354A PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS ISOCOM
IS357 TRANSISTOR OPTOCOUPLERS ETC
IS357 TRANSISTOR OPTOCOUPLERS ISOCOM
IS357A HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS ETC

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS35ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY
IS35ML01G084 1Gb(x8) 3.3V NAND FLASH MEMORY
IS35ML04G0168 4Gb SLC-8b ECC
IS35ML04G081 4Gb 3.3V X8 NAND FLASH MEMORY
IS35ML04G084 4Gb(x8) 3.3V NAND FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS34ML02G084 IS35ML02G084 2Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 2Gb(x8) 3.3V NAND FLASH MEMORY with 4b ECC IS34/35ML02G084 FEATURES  Flexible & Efficient Memory Architecture - Organization: 256Mb x8 - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.
Published: |