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IS35ML04G084 - 4Gb(x8) 3.3V NAND FLASH MEMORY

This page provides the datasheet information for the IS35ML04G084, a member of the IS34ML04G084 4Gb(x8) 3.3V NAND FLASH MEMORY family.

Datasheet Summary

Features

  • Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms.
  • typical.
  • Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V.

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Datasheet preview – IS35ML04G084

Datasheet Details

Part number IS35ML04G084
Manufacturer ISSI
File Size 1.30 MB
Description 4Gb(x8) 3.3V NAND FLASH MEMORY
Datasheet download datasheet IS35ML04G084 Datasheet
Additional preview pages of the IS35ML04G084 datasheet.

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Full PDF Text Transcription

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IS34ML04G084 IS35ML04G084 4Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML04G084 4Gb (x8) 3.3V NAND FLASH MEMORY with 4b ECC FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.
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