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IS35ML04G081 - 4Gb 3.3V X8 NAND FLASH MEMORY

This page provides the datasheet information for the IS35ML04G081, a member of the IS34ML04G081 4Gb 3.3V X8 NAND FLASH MEMORY family.

Datasheet Summary

Description

The IS34/35ML4G081 is a 512Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 400us - typical - Block Erase time: 3ms.
  • typical.
  • Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V.

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Datasheet preview – IS35ML04G081

Datasheet Details

Part number IS35ML04G081
Manufacturer ISSI
File Size 1.40 MB
Description 4Gb 3.3V X8 NAND FLASH MEMORY
Datasheet download datasheet IS35ML04G081 Datasheet
Additional preview pages of the IS35ML04G081 datasheet.

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Full PDF Text Transcription

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IS34ML04G081 IS35ML04G081 4Gb SLC-1b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 4Gb(x8) 3.3V NAND FLASH MEMORY with 1b ECC IS34/35ML04G081 FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 400us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.
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