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IS35ML01G084 - 1Gb(x8) 3.3V NAND FLASH MEMORY

Download the IS35ML01G084 datasheet PDF. This datasheet also covers the IS34ML01G084 variant, as both devices belong to the same 1gb(x8) 3.3v nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms.
  • typical.
  • Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS34ML01G084-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS34ML01G084 IS35ML01G084 1Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 1Gb(x8) 3.3V NAND FLASH MEMORY with 4b ECC IS34/35ML01G084 FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.
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