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IS34ML01G084 - 1Gb(x8) 3.3V NAND FLASH MEMORY

Features

  • Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms.
  • typical.
  • Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V).

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS34ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY
IS34ML02G084 2Gb(x8) 3.3V NAND FLASH MEMORY
IS34ML04G0168 4Gb SLC-8b ECC
IS34ML04G081 4Gb 3.3V X8 NAND FLASH MEMORY
IS34ML04G084 4Gb(x8) 3.3V NAND FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS34ML01G084 IS35ML01G084 1Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 1Gb(x8) 3.3V NAND FLASH MEMORY with 4b ECC IS34/35ML01G084 FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.
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