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IS34ML01G081 - 1Gb (x8) 3.3V NAND FLASH MEMORY

Datasheet Summary

Features

  • Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 400us - typical - Block Erase time: 3ms.
  • typical.
  • Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V).

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Datasheet Details

Part number IS34ML01G081
Manufacturer ISSI
File Size 1.58 MB
Description 1Gb (x8) 3.3V NAND FLASH MEMORY
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IS34ML01G081 IS35ML01G081 1Gb SLC-1b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 1Gb (x8) 3.3V NAND FLASH MEMORY with 1b ECC IS34/35ML01G081 FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 400us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.
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