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IS34ML04G0168 - 4Gb SLC-8b ECC

This page provides the datasheet information for the IS34ML04G0168, a member of the IS34ML04G088 4Gb SLC-8b ECC family.

Datasheet Summary

Description

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048.
  • Highest performance - Read Performance: - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance: - Program time: 300us (typ. ), 700.

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Datasheet preview – IS34ML04G0168

Datasheet Details

Part number IS34ML04G0168
Manufacturer ISSI
File Size 2.00 MB
Description 4Gb SLC-8b ECC
Datasheet download datasheet IS34ML04G0168 Datasheet
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IS34ML04G088/168 IS35ML04G088/168 4Gb SLC-8b ECC 3.3V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML04G088/168 4Gb (x8/x16) 3.3V NAND FLASH MEMORY with 8b ECC FEATURES • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048 • Highest performance - Read Performance: - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance: - Program time: 300us (typ.), 700us (max.) - Block Erase time: 3.5ms (typ.), 10ms (max.) • Voltage and Temp. Ranges - Single 3.3V (2.7V to 3.
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