• Part: IRG4BC20KD-S
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 222.97 KB
IRG4BC20KD-S Datasheet (PDF) Download
IRF
IRG4BC20KD-S

Key Features

  • hort Circuit Rated UltraFast IGBT
  • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • Industry standard D2Pak package
  • Latest generation 4 IGBTs offer highest power density motor controls possible
  • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
  • For hints see design tip