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IRG4BC20W - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction).

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Datasheet Details

Part number IRG4BC20W
Manufacturer IRF
File Size 130.26 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4BC20W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD 91652B IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.