SPA16N50C3 mosfet equivalent, n-channel mosfet.
*Drain-source on-resistance:
RDS(on) ≤ 250mΩ@10V
*Reduced switching and conduction losses
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust.
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source V.
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