SPA11N60C3E8185 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on) ≤0.38Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for r.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
*Ultra low gate charge
*High peak current capability
*Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous.
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