SPA1118Z amplifier equivalent, power amplifier.
* High Linearity Performance
* +21dBm IS-95 Channel
Power at -55dBc ACP
* +48dBm OIP3 Typ.
* On-Chip Active Bias Control
* Patented High Reliability
G.
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMO.
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces re.
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