Datasheet Details
| Part number | R6507KNJ |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.74 KB |
| Description | N-Channel MOSFET |
| Download | R6507KNJ Download (PDF) |
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| Part number | R6507KNJ |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.74 KB |
| Description | N-Channel MOSFET |
| Download | R6507KNJ Download (PDF) |
|
|
|
·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 78 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.6 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6507KNJ ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor R6507KNJ.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
R6507KNJ | Power MOSFET | ROHM |
 |
R6507 | (R650x / R651x) Microprocessors | Rockwell |
|
R6507ENJ | Power MOSFET | ROHM |
|
R6507ENX | Power MOSFET | ROHM |
| Part Number | Description |
|---|---|
| R6507ENJ | N-Channel MOSFET |
| R6507ENX | N-Channel MOSFET |
| R6504ENJ | N-Channel MOSFET |
| R6504ENX | N-Channel MOSFET |
| R6504KNJ | N-Channel MOSFET |
| R6504KNX | N-Channel MOSFET |
| R6509ENJ | N-Channel MOSFET |
| R6509ENX | N-Channel MOSFET |
| R6509KNJ | N-Channel MOSFET |
| R6509KNX | N-Channel MOSFET |