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R6507KNJ Datasheet

Manufacturer: Inchange Semiconductor
R6507KNJ datasheet preview

R6507KNJ Details

Part number R6507KNJ
Datasheet R6507KNJ Datasheet PDF (Download)
File Size 250.74 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6507KNJ page 2

R6507KNJ Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 78 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6507KNJ Key Features

  • Drain Current -ID= 7A@ TC=25℃ -Drain Source Voltage

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