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R6507ENJ - Power MOSFET

Features

  • 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   l.

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Datasheet Details

Part number R6507ENJ
Manufacturer ROHM
File Size 1.44 MB
Description Power MOSFET
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R6507ENJ   Nch 650V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.665Ω ±7A 78W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6507ENJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±7 A ±21 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 1.
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