Datasheet4U Logo Datasheet4U.com

R6507ENX - Power MOSFET

Features

  • 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-220FM 　 　　　　　　 lInner circuit 　 l.

📥 Download Datasheet

Datasheet preview – R6507ENX

Datasheet Details

Part number R6507ENX
Manufacturer ROHM
File Size 1.85 MB
Description Power MOSFET
Datasheet download datasheet R6507ENX Datasheet
Additional preview pages of the R6507ENX datasheet.

📁 Similar Datasheet

  • R6507ENX - N-Channel MOSFET (INCHANGE)
  • R6507ENJ - N-Channel MOSFET (INCHANGE)
  • R6507 - (R650x / R651x) Microprocessors (Rockwell)
  • R6507KNJ - N-Channel MOSFET (INCHANGE)
  • R6500 - Microcomputer Hardware Manual (Rockwell)
  • R6500-1 - One-Chip Microcomputer (Rockwell)
  • R6500-11 - One-Chip Microcomputers (Rockwell)
  • R6500-12 - One-Chip Microcomputers (Rockwell)
  • R6500-13 - One-Chip Microprocessor (Rockwell)
  • R6500-15 - One-Chip Microcomputers (Rockwell)
Other Datasheets by ROHM

Full PDF Text Transcription

Click to expand full text
R6507ENX 　　Nch 650V 7A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 650V 0.665Ω ±7A 46W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-220FM 　 　　　　　　 lInner circuit 　 lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±7 A ±21 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C) IAS EAS*3 PD 1.
Published: |