Datasheet4U Logo Datasheet4U.com

R6507ENJ - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 7A@ TC=25℃.
  • Drain Source Voltage- : VDSS=650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 665mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
R6507ENJ Power MOSFET ROHM
R6507ENX Power MOSFET ROHM
R6507 (R650x / R651x) Microprocessors Rockwell
R6507KNJ Power MOSFET ROHM
R6500 Microcomputer Hardware Manual Rockwell

Other Datasheets by Inchange Semiconductor

Part Number Description
R6507ENX N-Channel MOSFET
R6507KNJ N-Channel MOSFET
R6504ENJ N-Channel MOSFET
R6504ENX N-Channel MOSFET
R6504KNJ N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor R6507ENJ FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 665mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 78 W TJ Max.