MJ901 transistor equivalent, pnp transistor.
*Designed for power linear and switching applications
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
*High DC Current Gain-
: hFE= 1000(Min.)@IC= -3A
*Low Collector Saturation Voltage-
: VCE (sat)= -2.0V(Max.)@ IC= -3A
*Minimum Lot-to-Lot variations for robust device perfor.
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