MJ3001 transistor equivalent, npn transistor.
*Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATIN.
*Built-in Base-Emitter Shunt Resistors
*High DC current gain-
hFE = 1000 (Min) @ IC = 5A
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min)
*Complement to PNP type MJ2501
*Minimum Lot-to-Lot variations for robust device
perf.
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