MJ3738 transistor equivalent, silicon pnp power transistor.
*Designed for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -225V(Min)
*High Switching Speed
APPLICATIONS
*Designed for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
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