*Designed for power amplifier and switching applications.
*For ultimate circuit performance based on the design .

*Low Collector-Emitter Saturation VoltageVce(sat)=0.8V(Max)@Ic=10A
*Low Leakage Icbo=1mA(max)@100V
*High Current-Gain-Bandwidth ProductfT=2MHz(min)@Ic=1A APPLICATIONS
*Designed for power amplifier and switching applications.
*For .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts