Datasheet4U Logo Datasheet4U.com

IXTC26N50P - N-Channel MOSFET

Features

  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static drain-source on-resistance : RDS(on) ≤ 260mΩ@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTC26N50P PolarHV Power MOSFET IXYS Corporation
IXTC200N085T Power MOSFET IXYS Corporation
IXTC200N10T Power MOSFET IXYS Corporation
IXTC220N075T Power MOSFET IXYS Corporation
IXTC240N055T Power MOSFET IXYS Corporation

Other Datasheets by Inchange Semiconductor

Part Number Description
IXTC200N075T N-Channel MOSFET
IXTC200N085T N-Channel MOSFET
IXTC200N10T N-Channel MOSFET
IXTC220N055T N-Channel MOSFET
IXTC220N075T N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IXTC26N50P ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 260mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 78 PD Total Dissipation @TC=25℃ 100 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.
Published: |