*Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable o.

*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Volt.

IXTC200N075T

IXTC200N085T

IXTC220N055T

IXTC220N075T

IXTC240N055T

IXTC250N075T

IXTC26N50P

IXTC280N055T

IXTC110N055T

IXTC13N50

IXTC160N10T

IXTC180N085T

IXTC180N10T

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