ISCNH363N transistor equivalent, silicon npn power transistor.
*Drain Current : ID= 59A@ TC=25℃
*Drain Source Voltage
: VDSS= 300V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 36mΩ(Max)
*100% avalanche tested <.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
*motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
300
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
59
.
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