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ISCNH363N Datasheet, INCHANGE

ISCNH363N transistor equivalent, silicon npn power transistor.

ISCNH363N Avg. rating / M : 1.0 rating-11

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ISCNH363N Datasheet

Features and benefits


*Drain Current : ID= 59A@ TC=25℃
*Drain Source Voltage : VDSS= 300V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max)
*100% avalanche tested <.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 59 .

Image gallery

ISCNH363N Page 1 ISCNH363N Page 2

TAGS

ISCNH363N
Silicon
NPN
Power
Transistor
ISCNH370W
ISCNH371D
ISCNH372B
INCHANGE

Manufacturer


INCHANGE
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