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BUK436-200B - N-Channel MOSFET

Download the BUK436-200B datasheet PDF. This datasheet also covers the BUK436-200A variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Drain Source Voltage- : VDSS=200V(Min) Low RDS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK436-200A-INCHANGE.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BUK436-100A PowerMOS transistor Philips
BUK436-100B PowerMOS transistor Philips
BUK436W-1000B PowerMOS transistor NXP
BUK436W-200A PowerMOS transistor NXP
BUK436W-200B PowerMOS transistor NXP

Other Datasheets by Inchange Semiconductor

Part Number Description
BUK436-200A N-Channel MOSFET
BUK436-100A N-Channel MOSFET
BUK436-100B N-Channel MOSFET
BUK436-60A N-Channel MOSFET
BUK436-60B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK436-200A/B DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage Drain BUK436-200A ID Current-continuou s@ TC=25℃ BUK436-200B Ptot Total Dissipation@TC=25℃ ±30 V 19 A 17 125 W Tj Max.